Semiconductor device with user defined operations and associated methods and systems

ABSTRACT

Memory devices, systems including memory devices, and methods of operating memory devices are described, in which a memory device may select an option for a host device to access a memory array including a first portion configured to store user data and a second portion configured to store different data based on whether an ECC function of the memory device is enabled or disabled—e.g., storing ECC data when the ECC function is enabled, storing additional user data, metadata, or both when the ECC function is disabled. The host device may disable the ECC function and transmit an input to the memory device as to how to access the memory array. The memory device, based on the input, may select the option for the host device to access the memory array and communicate with the host device in accordance with the selected option.

TECHNICAL FIELD

The present disclosure generally relates to semiconductor devices, andmore particularly relates to a semiconductor device with user definedoperations and associated methods and systems.

BACKGROUND

Memory devices are widely used to store information related to variouselectronic devices such as computers, wireless communication devices,cameras, digital displays, and the like. Memory devices are frequentlyprovided as internal, semiconductor, integrated circuits and/or externalremovable devices in computers or other electronic devices. There aremany different types of memory, including volatile and non-volatilememory. Volatile memory, including random-access memory (RAM), staticrandom access memory (SRAM), dynamic random access memory (DRAM), andsynchronous dynamic random access memory (SDRAM), among others, requirea source of applied power to maintain its data. Non-volatile memory, bycontrast, can retain its stored data even when not externally powered.Non-volatile memory is available in a wide variety of technologies,including flash memory (e.g., NAND and NOR), phase change memory (PCM),ferroelectric random access memory (FeRAM), resistive random accessmemory (RRAM), and magnetic random access memory (MRAM), among others.Improving memory devices, generally, may include increasing memory celldensity, increasing read/write speeds or otherwise reducing operationallatency, increasing reliability, increasing data retention, reducingpower consumption, or reducing manufacturing costs, among other metrics.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram schematically illustrating a memory device inaccordance with an embodiment of the present technology.

FIG. 2 is a block diagram schematically illustrating a memory device inaccordance with an embodiment of the present technology.

FIG. 3 is a table illustrating various options for user definedoperations in accordance with an embodiment of the present technology.

FIG. 4 is a block diagram schematically illustrating a memory system inaccordance with an embodiment of the present technology.

FIG. 5 is a flow chart illustrating a method of operating a memorydevice in accordance with an embodiment of the present technology.

DETAILED DESCRIPTION

A memory device may include error checking and correcting (ECC)functions to generate reliable data—e.g., on-die ECC function. Analgorithm, program, or circuitry that performs the ECC function may bereferred to as or include aspects of error-correcting codes. Such amemory device may include an ECC circuit and a group of memory cells(e.g., a portion of memory array configured to store ECC parity bits,and which may be variously referred to as an ECC array, an ECC plane,and/or a parity plane) that supports the on-die ECC function. In someembodiments, the group of memory cells may be reserved to internallystore ECC data (e.g., internal to the memory device and inaccessible byusers) and the specified storage capacity of the memory device may notinclude the ECC array capacity. In some examples, the ECC array capacitymay occupy an appreciable portion of a memory array of the memorydevice—e.g., approximately 6% of a total memory array space. In somememory systems that include a host device coupled with such memorydevices, the host device (or the memory system) may perform its own ECCfunctions without entirely relying on the on-die ECC function. Forexample, the host device may be configured to perform a system level ECCfunction independent of the ECC data or the ECC algorithm of the memorydevices. As a result, the on-die ECC function may not be required by thememory system (or the host device) in some embodiments, and the memorydevice may be configured to provide additional features that may beotherwise unavailable.

Several embodiments of the present technology are directed to memorydevices, systems including memory devices, and methods of operatingmemory devices in which a host device may be configured to disable anECC function of a memory device and access a memory array of the memorydevice. In some embodiments, the memory array may include a firstportion configured to store user data (e.g., main array, user dataplane) and a second portion configured to store error checking andcorrecting (ECC) data associated with the user data of the first portion(e.g., ECC array, ECC plane, parity plane) when the ECC function ofmemory device is enabled. As set forth herein, a set of memory addressesmay correspond to the memory array where each memory address of the setcorresponds to the first portion and to the second portion of the memoryarray. In one embodiment, the memory device includes a register (e.g., amode register) to indicate whether the ECC function is enabled ordisabled. Further, the register (or a different register) may beconfigured to store one or more bits corresponding to a set of optionsfor the host device to access the memory array when the ECC function isdisabled.

When the ECC function is disabled, the memory device may configure thesecond portion of the memory array to store additional user data,metadata, or both. Metadata in a memory device may refer to various dataassociated with operational aspects of the memory device, such asoperating temperatures, latency settings, data transmission parameters.In some embodiments, the memory device may store the metadata in one ormore registers, to which an output circuit of the memory device hasaccess. In some embodiments, the memory device may store the metadata inthe memory array (including the second portion of the memory arrayreserved for the ECC functionality, when the ECC functionality isdisabled). Further, the memory device may bypass an ECC circuit thatperforms the ECC function for the user data. Additionally oralternatively, the memory device may provide a set of options for thehost device to access (e.g., read from, write to, erase portions of,etc.) the memory array, such as accessing the first portion of thememory array only (e.g., disregarding the second portion of the memoryarray), enabling additional address pins that may separately identifythe second portion of the memory array, accessing the second portion ofthe memory array based on the same set of memory addresses thatcorresponds to the first portion and to the second portion of the memoryarray, enabling additional data pins for communicating additional data(e.g., additional user data, metadata) for the second portion of thememory array, determining a different burst length (e.g., an increasedburst length) for communicating with the host device, etc.

In some embodiments, the host device may disable the ECC function of thememory device and transmit an input to the memory device as to how thehost device may proceed to access the memory array. The memory devicemay select an option from the set of options based on the input from thehost device and update one or more bits in the register based on theselected option. Further, the host device and the memory device mayestablish a proper protocol to communicate in accordance with theselected option. In some embodiments, the memory device may decode amodified memory address of an access command that utilizes extra addresspins corresponding to the second portion. In other embodiments, thememory device may enable extra data pins in the data channels (e.g.,bus, interface) to transmit or receive the additional data for thesecond portion. Further, the memory device may determine a burst lengthto transmit or receive data including the additional data for the secondportion.

A memory device that supports an embodiment of the present technology isdescribed with reference to FIG. 1. More detailed descriptions of thememory device are provided with reference to FIG. 2. FIG. 3 describes atable illustrating various options for user defined operations inaccordance with an embodiment of the present technology. A memory systemthat supports an embodiment of the present technology is described withreference to FIG. 4. A flowchart illustrating a method of operating thememory device is described with reference to FIG. 5.

FIG. 1 is a block diagram schematically illustrating a memory device 100in accordance with an embodiment of the present technology. The memorydevice 100 may include an array of memory cells, such as memory array150. The memory array 150 may include a plurality of banks (e.g., banks0-15 in the example of FIG. 1), and each bank may include a plurality ofword lines (WL), a plurality of bit lines (BL), and a plurality ofmemory cells (e.g., m×n memory cells) arranged at intersections of theword lines (e.g., m word lines, which may also be referred to as rows)and the bit lines (e.g., n bit lines, which may also be referred to ascolumns). Memory cells can include any one of a number of differentmemory media types, including capacitive, magnetoresistive,ferroelectric, phase change, or the like. In some embodiments, a portionof the memory array 150 (e.g., ECC plane) may be configurable to storeECC parity bits. That is, the memory array 150 may include a firstsubset of memory cells configured to store user-accessible data and asecond subset of memory cells (e.g., ECC parity bits) configured tostore different kinds of data—e.g., ECC data when an ECC function isenabled, non-ECC data when the ECC function is disabled. The selectionof a word line WL may be performed by a row decoder 140, and theselection of a bit line BL may be performed by a column decoder 145.Sense amplifiers (SAMP) may be provided for corresponding bit lines BLand connected to at least one respective local I/O line pair (LIOT/B),which may in turn be coupled to at least one respective main I/O linepair (MIOT/B), via transfer gates (TG), which can function as switches.The memory array 150 may also include plate lines and correspondingcircuitry for managing their operation.

In some embodiments, the memory array 150 includes a memory arrayincluding a set of memory cells. The set of memory cells may include afirst portion configured to store user data. Moreover, the set of memorycells may include a second portion reserved to store ECC data to supportthe ECC function of the memory device 100. Accordingly, when the ECCfunctionality is enabled, a host device may not directly access thesecond portion of the memory array 150. In one embodiment, the memoryarray 150 may correspond to a set of memory addresses where each memoryaddress of the set is associated with a first portion of the memoryarray and with a second portion of the memory array. Accordingly, when amemory address is provided by a host device, the memory address mayconcurrently identify the first portion and the second portion of thememory array 150. When the ECC function is enabled, a host device mayrely on the ECC function performed by the memory device 100 using theECC data in one embodiment. When the ECC function is disabled (e.g., bythe host device that performs its own ECC function), however, the memorydevice 100 may configure the second portion to store additional userdata, metadata associated with the memory device 100, or both. Further,the memory device 100 may provide a set of options for the host deviceto access the memory array 150 as described herein. In some embodiments,the memory device 100 may include one or more registers 118 (e.g., moderegisters) configured to indicate whether the ECC function is enabled ordisabled. Further, the registers 118 (or a different register) may beconfigured to store one or more bits corresponding to the set of optionsfor the host device to access the memory array 150 when the ECC functionis disabled.

The memory device 100 may employ a plurality of external terminals thatinclude command and address terminals coupled to a command bus and anaddress bus to receive command signals CMD and address signals ADDR,respectively. The memory device may further include a chip selectterminal to receive a chip select signal CS, clock terminals to receiveclock signals CK and CKF, data clock terminals to receive data clocksignals WCK and WCKF, data terminals DQ, RDQS, DBI (for data businversion function), and DMI (for data mask inversion function), powersupply terminals VDD, VSS, VDDQ, and VSSQ.

The command terminals and address terminals may be supplied with anaddress signal and a bank address signal from outside. The addresssignal and the bank address signal supplied to the address terminals canbe transferred, via a command/address input circuit 105, to an addressdecoder 110. The address decoder 110 can receive the address signals andsupply a decoded row address signal (XADD) to the row decoder 140, and adecoded column address signal (YADD) to the column decoder 145. Theaddress decoder 110 can also receive the bank address portion of theADDR input and supply the decoded bank address signal (BADD) and supplythe bank address signal to both the row decoder 140 and the columndecoder 145.

The command and address terminals may be supplied with command signalsCMD, address signals ADDR, and chip select signals CS, from a memorycontroller. The command signals may represent various memory commandsfrom the memory controller (e.g., including access commands, which caninclude read commands and write commands). The chip select signal CS maybe used to select the memory device 100 to respond to commands andaddresses provided to the command and address terminals. When an activeCS signal is provided to the memory device 100, the commands andaddresses can be decoded and memory operations can be performed. Thecommand signals CMD may be provided as internal command signals ICMD toa command decoder 115 via the command/address input circuit 105. Thecommand decoder 115 may include circuits to decode the internal commandsignals ICMD to generate various internal signals and commands forperforming memory operations, for example, a row command signal toselect a word line and a column command signal to select a bit line. Theinternal command signals can also include output and input activationcommands, such as clocked command CMDCK (not shown in FIG. 1).

The command decoder 115, in some embodiments, may further include one ormore registers 118 for tracking various counts or values (e.g., countsof refresh commands received by the memory device 100 or self-refreshoperations performed by the memory device 100). In some embodiments, asubset of registers 118 may be referred to as mode registers andconfigured to store user-defined variables or indications to provideflexibility in performing various functions, features, and modes (e.g.,ECC modes). For example, the subset of registers 118 may indicatewhether an ECC mode of the memory device is enabled or disabled—e.g.,whether the ECC function of the memory device 100 is enabled ordisabled. In some examples, the subset of registers 118 (or differentregisters 118 other than the subset) may be configured to store one ormore bits corresponding to a set of options for a host device to accessthe memory array when the ECC function of the memory device 100 isdisabled.

When a read command is issued to a bank with an open row and a columnaddress is timely supplied as part of the read command, read data can beread from memory cells in the memory array 150 designated by the rowaddress (which may have been provided as part of the Activate commandidentifying the open row) and column address. The read command may bereceived by the command decoder 115, which can provide internal commandsto input/output circuit 160 so that read data can be output from thedata terminals DQ, RDQS, DBI, and DMI via read/write amplifiers 155 andthe input/output circuit 160 according to the RDQS clock signals. Theread data may be provided at a time defined by read latency informationRL that can be programmed in the memory device 100, for example, in amode register (e.g., the register 118). The read latency information RLcan be defined in terms of clock cycles of the CK clock signal. Forexample, the read latency information RL can be a number of clock cyclesof the CK signal after the read command is received by the memory device100 when the associated read data is provided.

When a write command is issued to a bank with an open row and a columnaddress is timely supplied as part of the write command, write data canbe supplied to the data terminals DQ, DBI, and DMI according to the WCKand WCKF clock signals. The write command may be received by the commanddecoder 115, which can provide internal commands to the input/outputcircuit 160 so that the write data can be received by data receivers inthe input/output circuit 160, and supplied via the input/output circuit160 and the read/write amplifiers 155 to the memory array 150. The writedata may be written in the memory cell designated by the row address andthe column address. The write data may be provided to the data terminalsat a time that is defined by write latency WL information. The writelatency WL information can be programmed in the memory device 100, forexample, in the mode register (e.g., register 118). The write latency WLinformation can be defined in terms of clock cycles of the CK clocksignal. For example, the write latency information WL can be a number ofclock cycles of the CK signal after the write command is received by thememory device 100 when the associated write data is received.

Under the double data rate (DDR) scheme, a data burst having a burstlength 2N (e.g., eight (8), sixteen (16), thirty-two (32)) includes 2Nbits of data transmitted for each output pin (e.g., each data terminalDQ) of the memory device during N (e.g., four (4), eight (8), sixteen(16)) clock cycles (e.g., WCK and WCKF clock cycles). In someembodiments, the input/output circuit 160 may be configured tocommunicate with a host device (e.g., transmitting or receiving data viathe data terminals DQ) for more than one burst length. For example, whenthe register (e.g., the mode register) indicates that the ECC functionis enabled, the input/output circuit 160 may communicate with the hostdevice for a burst length of sixteen (16) (which may also be referred toas BL16). The burst length (e.g., BL16) may be determined to communicatethe user data for the first portion of the memory array 150 during theburst length. Moreover, the input/output circuit 160 may be configuredto communicate with the host device for a different burst length (e.g.,BL18) when the register indicates that the ECC function is disabled. Thedifferent burst length may be determined to communicate the user datafor the first portion of the memory array 150 and the additional userdata or the metadata for the second portion of the memory array 150during the different burst length. Although the example described aboveillustrates an increment in burst length by two (2) that corresponds toone (1) additional clock cycle, the scope of the invention is notlimited thereto. In some embodiments, the different burst length may bemore than one (1) clock cycle longer than the burst length—e.g., two (2)clock cycles longer, three (3) clock cycles longer, or even more.

The power supply terminals may be supplied with power supply potentialsVDD and VSS. These power supply potentials VDD and VSS can be suppliedto an internal voltage generator circuit 170. The internal voltagegenerator circuit 170 can generate various internal potentials VPP, VOD,VARY, VPERI, and the like based on the power supply potentials VDD andVSS. The internal potential VPP can be used in the row decoder 140, theinternal potentials VOD and VARY can be used in the sense amplifiersincluded in the memory array 150, and the internal potential VPERI canbe used in many other circuit blocks.

The power supply terminal may also be supplied with power supplypotential VDDQ. The power supply potential VDDQ can be supplied to theinput/output circuit 160 together with the power supply potential VSS.The power supply potential VDDQ can be the same potential as the powersupply potential VDD in an embodiment of the present technology. Thepower supply potential VDDQ can be a different potential from the powersupply potential VDD in another embodiment of the present technology.However, the dedicated power supply potential VDDQ can be used for theinput/output circuit 160 so that power supply noise generated by theinput/output circuit 160 does not propagate to the other circuit blocks.

The clock terminals and data clock terminals may be supplied withexternal clock signals and complementary external clock signals. Theexternal clock signals CK, CKF, WCK, WCKF can be supplied to a clockinput circuit 120. The CK and CKF signals can be complementary, and theWCK and WCKF signals can also be complementary. Complementary clocksignals can have opposite clock levels and transition between theopposite clock levels at the same time. For example, when a clock signalis at a low clock level a complementary clock signal is at a high level,and when the clock signal is at a high clock level the complementaryclock signal is at a low clock level. Moreover, when the clock signaltransitions from the low clock level to the high clock level thecomplementary clock signal transitions from the high clock level to thelow clock level, and when the clock signal transitions from the highclock level to the low clock level the complementary clock signaltransitions from the low clock level to the high clock level.

Input buffers included in the clock input circuit 120 can receive theexternal clock signals. For example, when enabled by a CKE signal fromthe command decoder 115, an input buffer can receive the CK and CKFsignals and the WCK and WCKF signals. The clock input circuit 120 canreceive the external clock signals to generate internal clock signalsICLK. The internal clock signals ICLK can be supplied to an internalclock circuit 130. The internal clock circuit 130 can provide variousphase and frequency controlled internal clock signal based on thereceived internal clock signals ICLK and a clock enable signal CKE fromthe command decoder 115. For example, the internal clock circuit 130 caninclude a clock path (not shown in FIG. 1) that receives the internalclock signal ICLK and provides various clock signals to the commanddecoder 115. The internal clock circuit 130 can further provideinput/output (IO) clock signals. The IO clock signals can be supplied tothe input/output circuit 160 and can be used as a timing signal fordetermining an output timing of read data and the input timing of writedata. The IO clock signals can be provided at multiple clock frequenciesso that data can be output from and input to the memory device 100 atdifferent data rates. A higher clock frequency may be desirable whenhigh memory speed is desired. A lower clock frequency may be desirablewhen lower power consumption is desired. The internal clock signals ICLKcan also be supplied to a timing generator 135 and thus various internalclock signals can be generated.

The memory device 100 can be connected to any one of a number ofelectronic devices capable of utilizing memory for the temporary orpersistent storage of information, or a component thereof. For example,a host device of memory device 100 may be a computing device such as adesktop or portable computer, a server, a hand-held device (e.g., amobile phone, a tablet, a digital reader, a digital media player), orsome component thereof (e.g., a central processing unit, a co-processor,a dedicated memory controller, etc.). The host device may be anetworking device (e.g., a switch, a router, etc.) or a recorder ofdigital images, audio and/or video, a vehicle, an appliance, a toy, orany one of a number of other products. In one embodiment, the hostdevice may be connected directly to memory device 100, although in otherembodiments, the host device may be indirectly connected to memorydevice (e.g., over a networked connection or through intermediarydevices).

FIG. 2 is a block diagram schematically illustrating a memory device 200in accordance with an embodiment of the present technology. The memorydevice 200 may be an example or include aspects of the memory device 100described with reference to FIG. 1. The memory device 200 may include aperiphery circuit 270, a register 275, an ECC circuit 280, and a memoryarray 250. The periphery circuit 270 may include aspects of variouscomponents described with reference to FIG. 1. For example, theperiphery circuit 270 may include aspects of the command/address inputcircuit 105, the address decoder 110, the command decoder 115, and theinput/output circuit 160, among others. Moreover, the memory array 250may be an example or include aspects of the memory array 150 describedwith reference to FIG. 1.

The memory array 250 may include a set of memory cells including a firstportion 260 and a second portion 265. Further, the memory array 250 maycorrespond to a set of memory addresses, where each memory address ofthe set of memory addresses corresponds to the first portion 260 and tothe second portion 265. The first portion 260 may be configured to storeuser data—e.g., data from the host device. In some embodiments, thefirst portion 260 may occupy a major portion of the storage capacity ofmemory array 250—e.g., greater than 90% of the storage capacity in anembodiment. The first portion 260 may represent a portion of the memoryarray 250 accessible by the host device regardless of whether the on-dieECC function of the memory device 200 is enabled or disabled. In someembodiments, the second portion 265 may be configured to store ECC datathat support the on-die ECC function when the on-die ECC function isenabled—hence, the second portion 265 may also be referred to as ECCparity bits or parity plane. The second portion 265 may occupy arelatively minor but appreciable portion of the storage capacity ofmemory array 250—e.g., approximately 5 to 10% of the storage capacity inan embodiment. In some embodiments, the second portion 265 may beinaccessible by the host device when the ECC function is enabled. Inother embodiments, the second portion 265 may be accessible by the hostdevice when the ECC function is enabled such that the host device mayaccess the ECC data.

The second portion 265, however, when the ECC function is disabled, maybe configured to store additional user data, metadata associated withthe memory device 200, or both. When the second portion 265 isconfigured to store the additional user data, the memory device 200 mayprovide an increased storage capacity to the host device—e.g., almost100% of the entire storage capacity (i.e., the entire storage capacitycorresponding to the first portion 260 and the second portion 265). Thatis, the memory device 200 can provide an extra storage capacity (i.e.,the storage capacity corresponding to the second portion 265) to thehost device in addition to the storage capacity corresponding to thefirst portion 260 (which may be referred to as the specified storagecapacity of the memory device). Moreover, the first portion 260 and thesecond portion 265 may provide user data uncorrected by the ECC functionof the memory device 200. Such uncorrected user data may provideopportunities for the host device to optimize and/or modify its ECCalgorithms should a change in error properties and/or characteristics isdetected, in some cases. In some embodiments, the host device may beconfigured to perform a separate ECC function that is different from theECC function of the memory device 200.

Additionally or alternatively, the second portion 265 may be configuredto store the metadata comprising information related to operationalmodes of the memory device 200, such as, operating temperatures, latencysettings associated with access commands, parameters for datatransmissions, test modes, or a combination thereof. In this manner, thememory device 200 may provide the metadata as part of access operations(e.g., read commands directed to the first portion 260) without havingto incur commands (e.g., a mode register read (MRR) command) to retrievethe metadata that may be stored otherwise in various registers (e.g.,mode registers) of the memory device 200. Such commands retrieving themetadata from the registers may introduce undesirable delay for thememory device 200 because the commands may put the memory device 200 ina specific mode (e.g., “status” mode) resulting in the memory array 250in a certain condition (e.g., “idle” condition). Consequently, usingsuch commands may be restricted and the host device's visibility to themetadata may also be limited.

In some embodiments, the second portion 265 may be organized to bephysically adjacent (or in close proximity) to the first portion 260such that certain components of the memory device 200 (e.g., row decoder140, column decoder 145, read/write amplifier 155, sense amplifiers(SAMP)) that support the first portion 260 and the second portion 265may be shared or efficiently laid out. In other embodiments, the secondportion 265 may be organized to be separate from the first portion 260such that the first portion 260 and the second portion 265 may operaterelatively independently of each other—e.g., the first and the secondsubsets having separate power domain, separate routing of control and/ordata paths.

The register 275 (which may also be referred to as a mode register) maybe configured to indicate whether an ECC function of the memory device200 (e.g., on-die ECC function) is enabled or disabled. In someembodiments, a host device coupled with the memory device 200 mayperform an ECC function without relying on the on-die ECC function ofthe memory device 200. In such cases, the register 275 may indicate thatthe on-die ECC function is disabled (e.g., by the host device) such thatthe memory device 200 may modify certain operational aspects to provideadditional features to the host device. Further, the register 275 may beconfigured to store one or more bits corresponding to a set of optionsfor the host device to access the memory array 250 when the ECC functionis disabled. In some embodiments, the memory device 200 may include anadditional register 276 (drawn in phantom in FIG. 2) configured to storeone or more bits corresponding to the set of options for the host deviceto access the memory array 250 when the ECC function is disabled.

The ECC circuit 280 performs an ECC function for the memory device 200when the ECC function is enabled. The ECC circuit 280 may be coupledwith the second portion 265 and perform the ECC function for the userdata stored in the first portion 260 using the ECC data stored in thesecond portion 265. In some embodiments, the ECC circuit 280 may beconfigured to detect two or more errors and/or to correct one or moreerrors in the user data. For example, the ECC circuit 280 may detect twobits of errors and correct one bit of error in the user data. In someembodiments, the ECC circuit 280 may be configured to indicate that theuser data includes a quantity of errors greater than its detection andcorrection capability.

The periphery circuit 270 may be configured to control overall aspectsof communicating with the host device and accessing the memory array250. For example, the periphery circuit 270 may receive an input fromthe host device directed to how the host device may proceed to accessthe memory array 250 when the ECC function is disabled. The peripherycircuit 270 may select an option from a set of options available for thehost device based on the input received from the host device.Subsequently, the periphery circuit 270 may update one or more bits inthe register 275 (or the second register 276) based on the selectedoption and carry out an access command from the host device inaccordance with the selected option as described in more detail withreference to FIG. 3. In some embodiments, the periphery circuit 270 maybypass the ECC circuit 280 when the ECC function is disabled.

Further, the periphery circuit 270 may communicate with the host devicein accordance with the selected option. In some cases, the peripherycircuit 270 may communicate with the host device without making anymodification in a communication protocol. For example, the peripherycircuit 270 may retrieve the user data uncorrected by the ECC functionor storing the user data without performing the ECC function—e.g.,accessing the first portion 260 without performing the ECC function. Inother cases, the periphery circuit 270 may modify the communicationprotocol to establish a proper environment to communicate with the hostdevice in accordance with the selected option—e.g., activatingadditional address pins (e.g., terminals) that are otherwisedeactivated, enabling additional data pins (e.g., data terminals DQ) inthe data channels (e.g., bus, interface), determining a burst length totransmit or receive data. Accordingly, the periphery circuit 270 may beconfigured to communicate with the host device for more than one burstlengths, in some embodiments.

Although memory devices with memory arrays having first portionsoccupying greater than 90% of the storage capacity thereof and secondportions occupying less than 10% of the storage capacity thereof havebeen described and illustrated in the foregoing exemplary embodiments,memory devices may be provided with memory arrays having differentallocations of storage capacity in other embodiments. For example, firstportions having less than 90% of the storage capacity (e.g., 75%, 66%,or even 50% or less) may be provided.

FIG. 3 is a table 300 illustrating various options for user definedoperations in accordance with an embodiment of the present technology.The table 300 may be an example of or include aspects of the one or morebits in the register 275 (or the second register 276) configured tostore a set of options for the host device to access the memory array250 when the ECC function of the memory device 200 is disabled. Theperiphery circuit 270 may update the one or more bits based on aselected option in accordance with an input from the host device. Thetable 300 illustrates three (3) bits of the register 275 (or the secondregister 276) in the first column (SETTING column) to list a defaultcondition and five (5) options. As the three bits may represent eight(8) different values (namely, 2³ different values), there may be up totwo (2) additional options that are not described with reference to thetable 300. Although the example described with reference to FIG. 3includes three (3) bits to indicate a set of options available to thehost device to access memory array 250, the scope of the invention isnot limited thereto. In some embodiments, the register 275 (or thesecond register 276) may include a different quantity of bits torepresent different set of options—e.g., one (1) bit, two (2) bits, four(4) bits, five (5) bits.

The table 300 further illustrates ECC states in the second column (ECCSTATE column) and options for accessing the memory array in the thirdcolumn (ECC ACCESS column). The ECC STATE indicates whether the ECCfunction of the memory device 200 is enabled (e.g., the defaultcondition corresponding to the logic state of “000” stored in theregister 275 or the second register 276) or disabled (e.g., one of thelogic states “001,” “010,” “011,” “100,” or “101” stored in the register275 or the second register 276). The ECC ACCESS provides briefdescription of options for the host device to access the memory array250.

The logic state “000” stored in the register 275 (or the second register276) may correspond to a default condition for the memory device 200 tosupport access commands from the host device. Under the defaultcondition, the host device may access the memory array 250 with theon-die ECC function enabled—e.g., retrieving user data from the firstportion 260 that has been checked by the ECC data in the second portion265, storing user data at the first portion 260 and associated ECC data(generated by the on-die ECC algorithm) stored at the second portion265. The memory device 200 operating under the default condition may beregarded to provide a full quality specification.

The logic state “001” stored in the register 275 (or the second register276) may correspond to a first option for the memory device 200 tosupport access commands from the host device. Under the first option,the host device may access the memory array 250 by accessing the firstportion 260 without having the ECC circuit 280 to perform the on-die ECCfunction (e.g., the ECC circuit 280 is bypassed or deactivated).Accordingly, the memory device 200 (e.g., the periphery circuit 270) mayretrieve user data from the first portion 260 uncorrected by the ECCfunction or store user data at the first portion 260 without performingthe ECC function—e.g., the periphery circuit 270 ignoring the secondportion 265 when the logic state stored in the register 275 (or thesecond register 276) corresponds to “001.” In some cases, this optionmay be regarded as providing a modified quality specification (which maybe referred to as operating under a reduced quality specification) whencompared to the default condition.

The logic state “010” stored in the register 275 (or the second register276) may correspond to a second option for the memory device 200 tosupport access commands from the host device. Under the second option,the host device may access the memory array 250 by accessing both thefirst portion 260 and the second portion 265 of the memory array 250. Asdescribed with reference to FIGS. 1 and 2, each memory address of theset of memory addresses corresponding to the memory array 250 mayidentify both the first portion 260 and the second portion 265 such thateach memory address may identify user data from the first portion 260and associated ECC data from the second portion 265 under the defaultcondition (e.g., when the ECC function is enabled). As such, the secondportion 265 may not have been designated with its own set of memoryaddresses under the default condition. In some embodiments, however, thememory device 200 may include one or more address pins that are separatefrom a quantity of address pins corresponding to the set of memoryaddresses for the memory array 250.

When the logic state stored in the register 275 (or the second register276) corresponds to “010” (i.e., under the second option), the one ormore address pins may be used to identify the second portion 265—e.g.,the second portion 265 may be designated with its own set of memoryaddresses, which may be independent of the first portion 260 of thememory array 250. Accordingly, a memory address associated with anaccess command may be modified to include a first segment and a secondsegment, where the first segment of the memory address corresponds tothe one or more address pins identifying the second portion 266 and thesecond segment of the memory address may remain the same as the defaultcondition—e.g., the second segment of the memory address correspondingto a quantity of address pins for the set of memory addressescorresponding to the memory array 250. In this manner, the memoryaddress associated with the access command may be configured toseparately identify the second portion 265 independent of the firstportion 260 of the memory array 250. Under the second option, the memorydevice 200 (e.g., periphery circuit 270) may be configured to decode thefirst segment of the memory address (in addition to decoding the secondsegment of the memory address) to identify the second portion 265 of thememory array 250 such that the host device may access both the firstportion 260 and the second portion 265 of the memory array 250.

The logic state “011” stored in the register 275 (or the second register276) may correspond to a third option for the memory device 200 tosupport access commands from the host device. Under the third option,the host device may access the memory array 250 by accessing the secondportion 265 in lieu of accessing the first portion 260 of the memoryarray 250. In other words, the logic state “011” stored in the register275 (or the second register 276) may function as a flag (or anindicator) for the periphery circuit 270 to access the second portion265, instead of the first portion 260, based on a memory addressassociated with an access command for the memory array 250. As describedherein, the memory address for the memory array 250 may be configured toidentify the first portion 260 for user data and the second portion 265for ECC data associated with the user data when operating under thedefault condition. As such, the memory device 200 (e.g., the peripherycircuit 270) may be configured to access the second portion 265 of thememory array 250 based on the memory address of the access commandinstead of accessing the first portion 260 when the logic state storedin the register 275 (or the second register 276) corresponds to “011.”

The logic state “100” stored in the register 275 (or the second register276) may correspond to a fourth option for the memory device 200 tosupport access commands from the host device. Under the fourth option,the host device may access the memory array 250 by accessing the secondportion 265 of the memory array 250 via a first set of data pins (e.g.,data terminals DQ) that is separate from a second set of data pinscorresponding to the user data for the first portion 260 of the memoryarray 250. As described herein with reference to FIGS. 1 and 2, thememory array 250 may be configured to communicate data (e.g., user datafor the first portion 260 of the memory array 250) via the second set ofdata pins. In some embodiments, however, the memory device 200 mayinclude the first set of data pins that are separate from the second setof data pins corresponding to the user data for the first portion 260 ofthe memory array 250. When the logic state “100” is stored in theregister 275 (or the second register 276), the memory device 200 (e.g.,the periphery circuit 270) may be configured to enable the first set ofdata pins in addition to (or in lieu of) the second set of data pinssuch that the memory device 200 may communicate additional data (e.g.,additional user data, metadata) for the second portion 265—e.g.,transmitting the additional data from the second portion 265 via thefirst set of data pins, receiving the additional data to store at thesecond portion 265 via the first set of data pins.

The logic state “101” stored in the register 275 (or the second register276) may correspond to a fifth option for the memory device 200 tosupport access commands from the host device. Under the fifth option,the host device may access the memory array 250 by communicating for aburst length that may correspond to the user data for the first portion260 and additional data for the second portion 265. When the logic state“101” is stored in the register 275 (or the second register 276), thememory device 200 (e.g., periphery circuit 270) may access both thefirst portion 260 and the second portion 265 of the memory array 250 anddetermine a burst length for communicating with the host device. Thenewly determined burst length (e.g., BL18) may be greater that the burstlength (e.g., BL16) used under the default condition by a burst length(e.g., BL2) that corresponds to the additional data for the secondportion 265.

FIG. 4 is a block diagram of a system 401 having a memory device 400configured in accordance with an embodiment of the present technology.The memory device 400 may be an example of or include aspects of thememory devices 100 or 200 described with reference to FIGS. 1 and 2. Asshown, the memory device 400 includes a main memory 402 (e.g., DRAM,NAND flash, NOR flash, FeRAM, PCM, etc.) and control circuitry 406operably coupled to a host device 408 (e.g., an upstream centralprocessor (CPU)). The main memory 402 may be an example of or includeaspects of the memory array 150 or 250 described with reference to FIGS.1 and 2. Further, the control circuitry 406 may be an example of orinclude aspects of the periphery circuit 270 described with reference toFIG. 2. The main memory 402 includes a plurality of memory units 420,which each include a plurality of memory cells. The memory units 420 canbe individual memory dies, memory planes in a single memory die, a stackof memory dies vertically connected with through-silicon vias (TSVs), orthe like. For example, in one embodiment, each of the memory units 420can be formed from a semiconductor die and arranged with other memoryunit dies in a single device package. In other embodiments, multiplememory units 420 can be co-located on a single die and/or distributedacross multiple device packages. The memory units 420 may, in someembodiments, also be sub-divided into memory regions 428 (e.g., banks,ranks, channels, blocks, pages, etc.).

The memory cells can include, for example, floating gate, charge trap,phase change, capacitive, ferroelectric, magnetoresistive, and/or othersuitable storage elements configured to store data persistently orsemi-persistently. The main memory 402 and/or the individual memoryunits 420 can also include other circuit components, such asmultiplexers, decoders, buffers, read/write drivers, address registers,data out/data in registers, etc., for accessing and/or programming(e.g., writing) the memory cells and other functionality, such as forprocessing information and/or communicating with the control circuitry406 or the host device 408. Although shown in the illustratedembodiments with a certain number of memory cells, rows, columns,regions, and memory units for purposes of illustration, the number ofmemory cells, rows, columns, regions, and memory units can vary, andcan, in other embodiments, be larger or smaller in scale than shown inthe illustrated examples. For example, in some embodiments, the memorydevice 400 can include only one memory unit 420. Alternatively, thememory device 400 can include two, three, four, eight, ten, or more(e.g., 16, 32, 64, or more) memory units 420. Although the memory units420 are shown in FIG. 4 as including four memory regions 428 each, inother embodiments, each memory unit 420 can include one, two, three,eight, or more (e.g., 16, 32, 64, 100, 128, 256 or more) memory regions.

In one embodiment, the control circuitry 406 can be provided on the samedie as the main memory 402 (e.g., including command/address/clock inputcircuitry, decoders, voltage and timing generators, input/outputcircuitry, etc.). In another embodiment, the control circuitry 406 canbe a microcontroller, special purpose logic circuitry (e.g., a fieldprogrammable gate array (FPGA), an application specific integratedcircuit (ASIC), control circuitry on a memory die, etc.), or othersuitable processor. In one embodiment, the control circuitry 406 caninclude a processor configured to execute instructions stored in memoryto perform various processes, logic flows, and routines for controllingoperation of the memory device 400, including managing the main memory402 and handling communications between the memory device 400 and thehost device 408. In some embodiments, the control circuitry 406 caninclude embedded memory with memory registers for storing, e.g., rowcounters, bank counters, memory pointers, fetched data, etc. In anotherembodiment of the present technology, a memory device 400 may notinclude control circuitry, and may instead rely upon external control(e.g., provided by the host device 408, or by a processor or controllerseparate from the memory device 400).

The host device 408 can be any one of a number of electronic devicescapable of utilizing memory for the temporary or persistent storage ofinformation, or a component thereof. For example, the host device 408may be a computing device such as a desktop or portable computer, aserver, a hand-held device (e.g., a mobile phone, a tablet, a digitalreader, a digital media player), or some component thereof (e.g., acentral processing unit, a co-processor, a dedicated memory controller,etc.). The host device 408 may be a networking device (e.g., a switch, arouter, etc.) or a recorder of digital images, audio and/or video, avehicle, an appliance, a toy, or any one of a number of other products.In one embodiment, the host device 408 may be connected directly tomemory device 400, although in other embodiments, the host device 408may be indirectly connected to memory device (e.g., over a networkedconnection or through intermediary devices).

In operation, the control circuitry 406 can directly write or otherwiseprogram (e.g., erase) the various memory regions of the main memory 402.The control circuitry 406 communicates with the host device 408 over ahost-device bus or interface 410. In some embodiments, the host-devicebus or interface 410 may be configured to carry data bursts havingvariable burst lengths. For example, the host-device bus or interface410 may carry data bursts having a first burst length (e.g., BL16) or asecond burst length (e.g., BL18, BL20, BL22, BL24) based on whether anECC function of the memory device 400 is enabled (e.g., BL16) ordisabled (e.g., BL18, BL20, BL22, BL24). In some embodiments, the hostdevice 408 and the control circuitry 406 can communicate over adedicated memory bus (e.g., a DRAM bus). In other embodiments, the hostdevice 408 and the control circuitry 406 can communicate over a serialinterface, such as a serial attached SCSI (SAS), a serial AT attachment(SATA) interface, a peripheral component interconnect express (PCIe), orother suitable interface (e.g., a parallel interface). The host device408 can send various requests (in the form of, e.g., a packet or streamof packets) to the control circuitry 406. A request can include acommand to read, write, erase, return information, and/or to perform aparticular operation (e.g., a refresh operation, a TRIM operation, aprecharge operation, an activate operation, a wear-leveling operation, agarbage collection operation, etc.).

In some embodiments, the control circuitry 406 can be configured totrack operations (e.g., read operations, write operations, eraseoperations, activate operations, etc.) performed in the main memory 402(e.g., in a register or table in an embedded memory of the controlcircuitry 406) in multiple memory units 420 to facilitate performingrefresh operations on an as-needed basis. In this regard, the controlcircuitry 406 can be configured to compare the number or rate ofoperations experienced by different memory units 420 and to perform orschedule refresh operations on the memory units 420 based on acomparison between the number or rate of operations experienced by thememory units 420. Alternatively, the control circuitry 406 can beconfigured to perform or schedule refresh operations on the memory units420 based on a comparison of each memory unit 420 to one or morepredetermined thresholds (e.g., threshold numbers of operations,threshold rates of operations, etc.). Accordingly, a memory unit 420which is the target of operations that exceed a threshold number or ratecan be refreshed more frequently than another unit 420, due to thefreedom with which different units 420 can be subjected to out-of-orderrefresh operations.

In some embodiments, the memory system 401 may include the host device408, a memory device 400 that includes a memory array (e.g., main memory402) corresponding to a set of memory addresses, where each memoryaddress of the set of memory addresses is associated with a firstportion of the memory array configured to store user data and with asecond portion of the memory array configured to store ECC dataassociated with the user data of the first portion when the ECC functionof the memory device 400 is enabled. The memory device 400 furtherincludes a register configured to store one or more bits correspondingto a set of options for the host device to access the memory array whenthe ECC function is disabled.

In some embodiments, the host device 408 may be configured to transmitan input directed to the set of options to access the memory array.Further, the memory device 400 may be configured to select an optionfrom the set of options based on the input from the host device 408,update the one or more bits in the register based on the selectedoption, and communicate with the host device 408 in accordance with theselected option. In some embodiments, the host device 408 may beconfigured to perform a separate ECC function that is different from theECC function of the memory device 400. In some cases, the host device408 may be configured to generate a memory address including a firstsegment and a second segment, where the first segment of the memoryaddress corresponds to one or more address pins that are separate from aquantity of address pins corresponding to the second segment for the setof memory addresses.

In some embodiments, the host device 408 may be configured to activateone or more channels associated with a first set of data pins of thememory device 400, where the first set of data pins corresponds toadditional data for the second portion and is separate from a second setof data pins corresponding to the user data for the first portion of thememory array. In some embodiments, the host device 408 may be configuredto communicate with the memory device 400 for a burst lengthcorresponding to the user data for the first portion and additional datafor the second portion.

FIG. 5 is a flow chart 500 illustrating a method of operating a memorydevice in accordance with an embodiment of the present technology. Theflow chart 500 may be an example of or include aspects of a method thatthe memory device 200 (or the periphery circuit 270 of the memory device200) may perform as described with reference to FIG. 2. Such memorydevice may include a memory array (e.g., the memory array 250 of thememory device 200) corresponding to a set of memory addresses, whereeach memory address of the set of memory addresses is associated with afirst portion (e.g., the first portion 260) of the memory arrayconfigured to store user data and with a second portion (e.g., thesecond portion 265) of the memory array configured to store ECC dataassociated with the user data of the first portion when an ECC functionof the memory device is enabled. Further, the memory device may includea register (e.g., the register 275 or the second register 276 of thememory device 200) configured to store one or more bits corresponding toa set of options for a host device to access the memory array when theECC function is disabled.

The method includes receiving, at a memory device, a signaling thatindicates an option selected from a set of options for a host device toaccess a memory array of the memory device when an ECC function of thememory device is disabled, the memory array corresponding to a set ofmemory addresses each associated with a first portion of the memoryarray configured to store user data and with a second portion of thememory array configured to store ECC data associated with the user dataof the first portion when an ECC function of the memory device isenabled (box 510). In accordance with one aspect of the presenttechnology, the receiving feature of box 510 can be performed by thecommand/address input circuit 105, a periphery circuit (e.g., theperiphery circuit 270 of FIG. 2), or control circuitry (e.g., thecontrol circuitry 406 of FIG. 4).

The method further includes storing, in a register of the memory device,one or more bits corresponding to the option selected from the set ofoptions (box 520). In accordance with one aspect of the presenttechnology, the storing feature of box 520 can be performed by theperiphery circuit (e.g., the periphery circuit 270 of FIG. 2) or thecontrol circuitry (e.g., the control circuitry 406 of FIG. 4) inconjunction with a register (e.g., the register 275 of FIG. 2).

The method further includes receiving, at the memory device, an accesscommand associated with a memory address of the set of memory addresses(box 530). In accordance with one aspect of the present technology, thereceiving feature of box 530 can be performed by the command/addressinput circuit 105, a periphery circuit (e.g., the periphery circuit 270of FIG. 2), or control circuitry (e.g., the control circuitry 406 ofFIG. 4).

The method further includes accessing the first portion of the memoryarray, the second portion of the memory array, or both in response tothe access command and based on the selected option as indicated by theone or more bits stored in the register (box 540). In accordance withone aspect of the present technology, the accessing feature of box 540can be performed by the periphery circuit (e.g., the periphery circuit270 of FIG. 2) or the control circuitry (e.g., the control circuitry 406of FIG. 4) in conjunction with an address decoder, a row decoder, acolumn decoder, and a read/write amplifier (e.g., the address decoder110, the row decoder 140, the column decoder 145, and the read/writeamplifier 155 of FIG. 1).

The method further includes communicating with the host device inaccordance with the selected option (box 550). In accordance with oneaspect of the present technology, the communicating feature of box 550can be performed by the periphery circuit (e.g., the periphery circuit270 of FIG. 2) or the control circuitry (e.g., the control circuitry 406of FIG. 4) in conjunction with an input/output circuit (e.g., theinput/output circuit 160 of FIG. 1).

The method can further include decoding a first segment of the memoryaddress associated with the access command to identify the secondportion of the memory array. In some embodiments, the first segmentcorresponds to one or more address pins that are separate from aquantity of address pins corresponding to the plurality of memoryaddresses. In accordance with one aspect of the present technology, thedecoding feature can be performed by the periphery circuit (e.g., theperiphery circuit 270 of FIG. 2) or the control circuitry (e.g., thecontrol circuitry 406 of FIG. 4) in conjunction with an address decoder,a row decoder, and a column decoder (e.g., the address decoder 110, therow decoder 140, and the column decoder 145 of FIG. 1).

In some embodiments, accessing the first portion of the memory arrayincludes retrieving the user data uncorrected by the ECC function orstoring the user data without performing the ECC function. In someembodiments, accessing the second portion of the memory array may bebased on the memory address associated with the access command. Inaccordance with one aspect of the present technology, the accessingfeature can be performed by the periphery circuit (e.g., the peripherycircuit 270 of FIG. 2) or the control circuitry (e.g., the controlcircuitry 406 of FIG. 4) in conjunction with an address decoder, a rowdecoder, a column decoder, and a read/write amplifier (e.g., the addressdecoder 110, the row decoder 140, the column decoder 145, and theread/write amplifier 155 of FIG. 1).

The method can further include enabling a first set of data pinscorresponding to additional data for the second portion of the memoryarray. In accordance with one aspect of the present technology, theenabling feature can be performed by the periphery circuit (e.g., theperiphery circuit 270 of FIG. 2) or the control circuitry (e.g., thecontrol circuitry 406 of FIG. 4) in conjunction with an input/outputcircuit (e.g., the input/output circuit 160 of FIG. 1).

The method can further include determining a burst length forcommunicating with the host device, where the burst length correspondsto the user data for the first portion and additional data for thesecond portion. In accordance with one aspect of the present technology,the enabling feature can be performed by the periphery circuit (e.g.,the periphery circuit 270 of FIG. 2) or the control circuitry (e.g., thecontrol circuitry 406 of FIG. 4).

It should be noted that the methods described above describe possibleimplementations, and that the operations and the steps may be rearrangedor otherwise modified and that other implementations are possible.Furthermore, embodiments from two or more of the methods may becombined.

Information and signals described herein may be represented using any ofa variety of different technologies and techniques. For example, data,instructions, commands, information, signals, bits, symbols, and chipsthat may be referenced throughout the above description may berepresented by voltages, currents, electromagnetic waves, magneticfields or particles, optical fields or particles, or any combinationthereof. Some drawings may illustrate signals as a single signal;however, it will be understood by a person of ordinary skill in the artthat the signal may represent a bus of signals, where the bus may have avariety of bit widths.

The devices discussed herein, including a memory device, may be formedon a semiconductor substrate or die, such as silicon, germanium,silicon-germanium alloy, gallium arsenide, gallium nitride, etc. In somecases, the substrate is a semiconductor wafer. In other cases, thesubstrate may be a silicon-on-insulator (SOI) substrate, such assilicon-on-glass (SOG) or silicon-on-sapphire (SOP), or epitaxial layersof semiconductor materials on another substrate. The conductivity of thesubstrate, or sub-regions of the substrate, may be controlled throughdoping using various chemical species including, but not limited to,phosphorous, boron, or arsenic. Doping may be performed during theinitial formation or growth of the substrate, by ion-implantation, or byany other doping means.

The functions described herein may be implemented in hardware, softwareexecuted by a processor, firmware, or any combination thereof. Otherexamples and implementations are within the scope of the disclosure andappended claims. Features implementing functions may also be physicallylocated at various positions, including being distributed such thatportions of functions are implemented at different physical locations.

As used herein, including in the claims, “or” as used in a list of items(for example, a list of items prefaced by a phrase such as “at least oneof” or “one or more of”) indicates an inclusive list such that, forexample, a list of at least one of A, B, or C means A or B or C or AB orAC or BC or ABC (i.e., A and B and C). Also, as used herein, the phrase“based on” shall not be construed as a reference to a closed set ofconditions. For example, an exemplary step that is described as “basedon condition A” may be based on both a condition A and a condition Bwithout departing from the scope of the present disclosure. In otherwords, as used herein, the phrase “based on” shall be construed in thesame manner as the phrase “based at least in part on.”

From the foregoing, it will be appreciated that specific embodiments ofthe invention have been described herein for purposes of illustration,but that various modifications may be made without deviating from thescope of the invention. Rather, in the foregoing description, numerousspecific details are discussed to provide a thorough and enablingdescription for embodiments of the present technology. One skilled inthe relevant art, however, will recognize that the disclosure can bepracticed without one or more of the specific details. In otherinstances, well-known structures or operations often associated withmemory systems and devices are not shown, or are not described indetail, to avoid obscuring other aspects of the technology. In general,it should be understood that various other devices, systems, and methodsin addition to those specific embodiments disclosed herein may be withinthe scope of the present technology.

What is claimed is:
 1. An apparatus comprising: a memory arraycorresponding to a plurality of memory addresses, each memory address ofthe plurality of memory addresses associated with a first portion of thememory array configured to store user data and with a second portion ofthe memory array configured to store error-correcting code (ECC) dataassociated with the user data of the first portion when an ECC functionof the apparatus is enabled; a register configured to store one or morebits corresponding to a plurality of options for a host device to accessthe memory array when the ECC function is disabled; and circuitryconfigured to: select an option from the plurality of options based onan input from the host device when the ECC function is disabled; updatethe one or more bits in the register based on the selected option; andcommunicate with the host device in accordance with the selected optionwhen the ECC function is disabled.
 2. The apparatus of claim 1, whereinthe circuitry is further configured to bypass an ECC circuit thatperforms the ECC function for the user data.
 3. The apparatus of claim1, wherein the selected option includes retrieving the user datauncorrected by the ECC function or storing the user data withoutperforming the ECC function.
 4. The apparatus of claim 1, wherein theselected option includes decoding a first segment of a memory addressassociated with an access command to identify the second portion of thememory array.
 5. The apparatus of claim 4, wherein the first segment ofthe memory address corresponds to one or more address pins that areseparate from a quantity of address pins corresponding to the pluralityof memory addresses.
 6. The apparatus of claim 1, wherein the selectedoption includes accessing the second portion of the memory array basedon a memory address of an access command, the memory addresscorresponding to a memory address of the plurality of memory addresses.7. The apparatus of claim 1, wherein the selected option includesenabling a first set of data pins corresponding to additional data forthe second portion of the memory array.
 8. The apparatus of claim 7,wherein the first set of data pins are separate from a second set ofdata pins corresponding to the user data for the first portion of thememory array.
 9. The apparatus of claim 1, wherein the selected optionincludes determining a burst length for communicating with the hostdevice, the burst length corresponding to the user data for the firstportion and additional data for the second portion.
 10. The apparatus ofclaim 9, wherein communicating with the host device includestransmitting or receiving the user data and the additional data for theburst length.
 11. A method comprising: receiving, at a memory device, asignaling that indicates an option selected from a plurality of optionsfor a host device to access a memory array of the memory device when anerror-correcting code (ECC) function of the memory device is disabled,the memory array corresponding to a plurality of memory addresses eachassociated with a first portion of the memory array configured to storeuser data and with a second portion of the memory array configured tostore ECC data associated with the user data of the first portion whenan ECC function of the memory device is enabled; storing, in a registerof the memory device, one or more bits corresponding to the optionselected from the plurality of options; receiving, at the memory device,an access command associated with a memory address of the plurality ofmemory addresses; accessing the first portion of the memory array, thesecond portion of the memory array, or both in response to the accesscommand and based at least in part on the selected option as indicatedby the one or more bits stored in the register; and communicating withthe host device in accordance with the selected option.
 12. The methodof claim 11, further comprising decoding a first segment of the memoryaddress associated with the access command to identify the secondportion of the memory array.
 13. The method of claim 11, whereinaccessing the first portion of the memory array comprises retrieving theuser data uncorrected by the ECC function or storing the user datawithout performing the ECC function.
 14. The method of claim 11, furthercomprising enabling a first set of data pins corresponding to additionaldata for the second portion of the memory array.
 15. The method of claim11, further comprising determining a burst length for communicating withthe host device, the burst length corresponding to the user data for thefirst portion and additional data for the second portion.
 16. A memorysystem comprising: a host device; and a memory device including: amemory array corresponding to a plurality of memory addresses, eachmemory address of the plurality of memory addresses corresponding to afirst portion of the memory array configured to store user data and to asecond portion of the memory array configured to store error checkingand correcting (ECC) data associated with the user data of the firstportion when an ECC function of the memory device is enabled; and aregister configured to store one or more bits corresponding to aplurality of options for the host device to access the memory array whenthe ECC function is disabled; wherein the host device is configured totransmit an input directed to the plurality of options to access thememory array, and wherein the memory device is configured to: select anoption from the plurality of options based on the input from the hostdevice; update the one or more bits in the register based on theselected option; and communicate with the host device in accordance withthe selected option.
 17. The memory system of claim 16, wherein the hostdevice is further configured to perform a separate ECC function that isdifferent from the ECC function of the memory device.
 18. The memorysystem of claim 16, wherein the host device is further configured togenerate a memory address comprising a first segment and a secondsegment, the first segment of the memory address corresponding to one ormore address pins that are separate from a quantity of address pinscorresponding to the second segment for the plurality of memoryaddresses.
 19. The memory system of claim 16, wherein the host device isfurther configured to activate one or more channels associated with afirst set of data pins of the memory device, the first set of data pinscorresponding to additional data for the second portion and separatefrom a second set of data pins corresponding to the user data for thefirst portion.
 20. The memory system of claim 16, wherein the hostdevice is further configured to communicate with the memory device for aburst length corresponding to the user data for the first portion andadditional data for the second portion.